Temperature-Dependent Study of 6H-SiC PiN-Diode Static Forward and Reverse Characteristics
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چکیده
Forward and Reverse Characteristics M. Lades y, A. Schenk ], U. Krumbein ], G. Wachutka y, W. Fichtner ] yPhysics of Electrotechnology, Tech. Univ. of Munich, Germany ]Integrated Systems Laboratory, ETH{Z urich, Switzerland A numerical analysis of the static forward and reverse characteristics of 6H-SiC PIN-diodes has been performed across a temperature range of 300 623 K. Using the device simulator Dessis ISE we discuss the contributions of di erent physical mechanisms to the device behavior including eld dependent recombination due to the Franz-Keldysh and the Poole-Frenkel e ect. Numerical investigations of the blocking behavior at lower temperatures yield low activation energies of 0.2 1 eV for the measured reverse current.
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تاریخ انتشار 2007